Displacement measuring grating interferometer: a review
P Hu, D Chang, J Tan, R Yang, H Yang… - Frontiers of Information …, 2019 - Springer
A grating interferometer, called the “optical encoder,” is a commonly used tool for precise
displacement measurements. In contrast to a laser interferometer, a grating interferometer is …
displacement measurements. In contrast to a laser interferometer, a grating interferometer is …
PPAC scaling enablement for 5nm mobile SoC technology
M Badaroglu, J Xu, J Zhu, D Yang, J Bao… - 2017 47th European …, 2017 - ieeexplore.ieee.org
We present a 5nm logic technology scaling step-up holistic approach for 5-track standard
cell design employing electrically gate-all-around nanowire architecture (EGAA NW) with …
cell design employing electrically gate-all-around nanowire architecture (EGAA NW) with …
Comparison of the hot carrier degradation of N-and P-type fin field-effect transistors in 14-nm technology nodes
FM Ciou, JH Lin, PH Chen, TC Chang… - IEEE Electron …, 2021 - ieeexplore.ieee.org
In this study, we fabricated an n-type fin field-effect transistor (FinFET) and a p-type FinFET
(p-FinFET) to compare their hot carrier degradation (HCD) in 14-nm technology nodes. We …
(p-FinFET) to compare their hot carrier degradation (HCD) in 14-nm technology nodes. We …
[图书][B] Optimization of the BEOL interconnect stack for advanced semiconductor technology nodes
PP Shah - 2015 - search.proquest.com
Particularly in advanced technology nodes, interconnects significantly affect the power,
performance, area and reliability of integrated circuits. Requirements of high integration …
performance, area and reliability of integrated circuits. Requirements of high integration …
Interconnect-aware device targeting from PPA perspective
M Badaroglu, J Xu - 2016 IEEE/ACM International Conference …, 2016 - ieeexplore.ieee.org
CMOS scaling so far enabled simultaneous system throughput scaling by concurrent
improvements in delay, power, and area with thanks to Moore's law. CMOS scaling becomes …
improvements in delay, power, and area with thanks to Moore's law. CMOS scaling becomes …
Insights into Cold Source MOSFETs with Sub-60 mV/decade and Negative Differential Resistance Effect
Y Yin, Z Zhang, C Shao, J Robertson, Y Guo - arXiv preprint arXiv …, 2021 - arxiv.org
To extend the Moores law in the 5 nm node, a large number of two dimensional (2D)
materials and devices have been thoroughly researched, among which the cold metals 2H …
materials and devices have been thoroughly researched, among which the cold metals 2H …
Role of π-electron conjugation in determining the electrical responsive properties of polychlorinated biphenyls: a DFT based computational study
R Maity, D Mandal, A Misra - SN Applied Sciences, 2020 - Springer
Global reactivity descriptors eg average polarizabilty (α av), chemical hardness (η),
electrophilicity index (ω) of some donor–acceptor substituted polychlorinated biphenyl …
electrophilicity index (ω) of some donor–acceptor substituted polychlorinated biphenyl …
[PDF][PDF] Proactive Supply Noise Mitigation and Design
陳俊 - 2020 - ir.library.osaka-u.ac.jp
With the scaling down of the technology node, both power consumption, and supply noise
are continuously increasing in modern VLSI designs. The emergent power supply noise …
are continuously increasing in modern VLSI designs. The emergent power supply noise …