[HTML][HTML] Towards reliable X-ray photoelectron spectroscopy: sputter-damage effects in transition metal borides, carbides, nitrides, and oxides

G Greczynski, L Hultman - Applied Surface Science, 2021 - Elsevier
Ar+ sputter etching is often used prior to X-ray photoelectron spectroscopy (XPS) analyses
with the intention to remove surface oxides and contaminants. Since the XPS probing depth …

A complete and self-consistent evaluation of XPS spectra of TiN

D Jaeger, J Patscheider - Journal of Electron Spectroscopy and Related …, 2012 - Elsevier
The electron configuration in single crystalline (sc-) titanium nitride (TiN) has been
quantitatively studied using angle resolved X-ray photoelectron spectroscopy (AR-XPS). All …

Core-level spectra and binding energies of transition metal nitrides by non-destructive x-ray photoelectron spectroscopy through capping layers

G Greczynski, D Primetzhofer, J Lu, L Hultman - Applied Surface Science, 2017 - Elsevier
We present the first measurements of x-ray photoelectron spectroscopy (XPS) core level
binding energies (BE: s) for the widely-applicable group IVb-VIb polycrystalline transition …

Electronic and structural properties of transition-metal carbide and nitride surfaces

LI Johansson - Surface science reports, 1995 - Elsevier
Findings concerning the electronic and structural properties of clean surfaces of transition-
metal carbides and nitrides are reviewed. Topics treated are: investigations of the occupied …

Thin films of hard cubic Zr3N4 stabilized by stress

M Chhowalla, HE Unalan - Nature materials, 2005 - nature.com
Hard, refractory thin films consisting of group IVB element mono-nitrides deposited using
various chemical and physical vapour-deposition techniques are widely used in wear …

Effect of deposition temperature on microstructure and corrosion resistance of ZrN thin films deposited by DC reactive magnetron sputtering

D Roman, J Bernardi, CLG de Amorim… - Materials Chemistry and …, 2011 - Elsevier
Thin films of zirconium nitride were deposited on different substrates by direct current
reactive magnetron sputtering, varying the deposition time, Ar/N2 partial pressure ratio and …

Valence band photoemission study of the Ti Mo N system

R Sanjinés, C Wiemer, J Almeida, F Levy - Thin Solid Films, 1996 - Elsevier
An experimental study of the electronic structure of Ti1− xMoxNy thin films deposited by
reactive sputtering is presented. We analyze the degree of nitridation of TiNy, MoNy and …

Structure and electronic properties of zirconium and hafnium nitrides and oxynitrides

DI Bazhanov, AA Knizhnik, AA Safonov… - Journal of applied …, 2005 - pubs.aip.org
The atomic structure, stability and electronic properties of zirconium and hafnium nitrides
and oxynitrides (⁠ MN⁠, M 3 N 4⁠, and M 2 N 2 O⁠; M= Zr⁠, Hf) have been studied using …

Influence of nitrogen flow rate on microstructural and nanomechanical properties of Zr–N thin films prepared by pulsed DC magnetron sputtering

A Singh, P Kuppusami, S Khan, C Sudha… - Applied Surface …, 2013 - Elsevier
Zr–N thin films were deposited on Si (100) substrate by reactive sputtering using a pulsed
DC magnetron sputtering technique. It was found that films deposited at 773K and 1sccm of …

Development of group 4 and 5 metal oxide-based cathodes for polymer electrolyte fuel cell

K Ota, Y Ohgi, KD Nam, K Matsuzawa… - Journal of Power …, 2011 - Elsevier
Partially oxidized zirconium, niobium, and tantalum carbonitrides were prepared to discuss a
characteristic common to all. The onset potential for the ORR of partially oxidized …