Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Recent progress in nanostructured silver sulfide: from synthesis and nonstoichiometry to properties
SI Sadovnikov, AI Gusev - Journal of Materials Chemistry A, 2017 - pubs.rsc.org
The microstructure (composition, nonstoichiometry, size and shape of particles) of
nanostructured semiconductor silver sulfide (Ag2S) determines its electronic structure …
nanostructured semiconductor silver sulfide (Ag2S) determines its electronic structure …
Advances in resistive switching based memory devices
Among the emerging memories, resistive switching (RS) based resistive random-access
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …
Engineering of defects in resistive random access memory devices
Defects are essential to switch the resistance states in resistive random-access memory
(RRAM) devices. Controlled defects in such devices can lead to the stabilization of the …
(RRAM) devices. Controlled defects in such devices can lead to the stabilization of the …
Energy-efficient three-terminal SiOx memristor crossbar array enabled by vertical Si/graphene heterojunction barristor
A three-terminal memristor is an electronic memory architecture that is particularly suitable
for next-generation devices owing to its customizable intrinsic switching characteristics …
for next-generation devices owing to its customizable intrinsic switching characteristics …
Direct observation of conductive filaments from 3D views in memristive devices based on multilayered SiO2: Formation, Dissolution, and vaporization
B Zhang, B Gu, J Petr, J Rodriguez-Pereira… - Applied Surface …, 2024 - Elsevier
Memristive devices, also known as memristors or ReRAMs, are promising candidates for
accessing next-generation memory. In classic electrochemical metallization (ECM) theory …
accessing next-generation memory. In classic electrochemical metallization (ECM) theory …
[HTML][HTML] One-step facile solution synthesis of α-Ag2S nanoparticles and fabrication of multi-layered thin films
The ductility possessed by α-Ag 2 S renders it a promising candidate for various forthcoming
stretchable electronic devices. There is a significant need for a facile approach for producing …
stretchable electronic devices. There is a significant need for a facile approach for producing …
The ubiquitous memristive response in solids
RSW Silva, F Hartmann… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Basic ingredients universally available in the carrier transport of conductive solids are
proved to be sufficient (not necessary) conditions for the formation of memory while …
proved to be sufficient (not necessary) conditions for the formation of memory while …
Modeling and characterization of stochastic resistive switching in single Ag2S nanowires
N Frick, M Hosseini, D Guilbaud, M Gao… - Scientific Reports, 2022 - nature.com
Chalcogenide resistive switches (RS), such as Ag2S, change resistance due to the growth of
metallic filaments between electrodes along the electric field gradient. Therefore, they are …
metallic filaments between electrodes along the electric field gradient. Therefore, they are …
Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions
The microscopic origins and technological impact of 1/f type current fluctuations in Ag based,
filamentary type resistive switching devices have been investigated upon downscaling …
filamentary type resistive switching devices have been investigated upon downscaling …