We use the available transport measurements in the literature to develop a dataset for the
likely amount of disorder in semiconductor (InAs and InSb) materials which are used in …

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor
nanostructures in a device-compatible configuration. In the current paradigm, SAE is …

Due to their flexible geometry, in-plane selective area grown (SAG) nanowires (NWs)
encompass the advantages of vapor–liquid–solid NWs and planar structures. The complex …

New approaches such as selective area growth (SAG), where crystal growth is
lithographically controlled, allow the integration of bottom-up grown semiconductor …

Bottom-up grown nanomaterials play an integral role in the development of quantum
technologies but are often challenging to characterise on large scales. Here, we harness …

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers.
Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while …

Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-
controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and …

Atomic-scale information about the structural and compositional properties of novel
semiconductor nanowires is essential to tailoring their properties for specific applications …

The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective
area epitaxy are investigated using a process-free method involving a multi-probe scanning …

Using high resolution scanning transmission electron microscopy and low-loss electron
energy loss spectroscopy, we correlate the local bandgap (Eg), indium concentration, and …