This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Over the past several decades, quantum information science has emerged to seek answers
to the question: can we gain some advantage by storing, transmitting and processing …

To expand the capabilities of semiconductor devices for new functions exploiting the
quantum states of single donors or other impurity atoms requires a deterministic fabrication …

Spin-qubits based on impurities such as phosphorus in silicon (Si) have attractive attributes
for the development of quantum computing devices. Very long coherence times can be …

Current progress on micro/nanofabrication of dynamic mode cantilever sensors utilized as
scanning probes, and their diverse sensing applications within physics, chemistry, and …

The major challenges to fabricate quantum processors and future nano-solid-state devices
are material modification techniques with nanometer resolution and suppression of …

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species,
and high single ion detection fidelity opens opportunities for the study of dopant fluctuation …

By 2016, transistor device size will be just 10 nm. However, a transistor that is doped at a
typical concentration of 10 18 atoms cm− 3 has only one dopant atom in the active channel …

Deterministic control over the location and number of donors is crucial to donor spin
quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused …

Scaling down the size of computing circuits is about to reach the limitations imposed by the
discrete atomic structure of matter. Reducing the power requirements and thereby …