Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

The subject of this book is the investigation of lattice imperfections in semiconductors by
means of positron annihilation. A comprehensive review is given of the different positron …

In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

The diffusion of intrinsic defects in 3 C− SiC is studied using an ab initio method based on
density functional theory. The vacancies are shown to migrate on their own sublattice. The …

The annealing kinetics of mobile intrinsic defects in cubic SiC is investigated by an ab initio
method based on density-functional theory. The interstitial-vacancy recombination, the …

We present results of ab initio calculations for the electronic and atomic structures of
monovacancies and antisite defects in 4H-SiC in all possible charge states. The calculations …

Irradiation of fast particles like 1 MeV electrons and 2 MeV protons was made for single
crystalline cubic silicon carbide (3C‐SiC) grown epitaxially on Si by chemical vapor …

We propose a mechanism for the annealing of vacancy-related defects in SiC, based on ab
initio total energy calculations. Our mechanism is based on the formation and migration of …

Using the self-consistent-charge density-functional-based tight-binding (SCC-DFTB)
method, we have investigated the migration of vacancies at high temperatures, taking into …

We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC)
using a combination of theoretical and experimental methodologies. The VC, commonly …