Assessment of the biosensing capabilities of SiGe heterojunction negative capacitance-vertical tunnel field-effect transistor
In this study, a comparison of the negative capacitance vertical tunnel field-effect transistor
(NC-VTFET) and VTFET for biosensing applications was conducted. Dielectrically …
(NC-VTFET) and VTFET for biosensing applications was conducted. Dielectrically …
Numerical simulation of hetero dielectric trench gate JAM gate-all-around FET (HDTG-JAM-GAAFET) for label free biosensing applications
S Yadav, S Rewari - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
The label free detection of various biomolecules associated with different diseases has been
proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric …
proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric …
Insights into the impact of pocket and source elevation in vertical gate elevated source tunnel FET structures
In this paper, we investigate a vertical gate-based elevated tunnel source (TS) FET structure
with and without a vertical n+ pocket and compare its performance with a lateral pnin TS …
with and without a vertical n+ pocket and compare its performance with a lateral pnin TS …
Gate-on-drain overlapped L-shaped channel tunnel FET as label-free biosensor
In this work gate-on-drain L-shaped channel Tunnel FET is proposed to detect various
biomolecules through label-free bio-sensing detection technique. Biomolecules can be …
biomolecules through label-free bio-sensing detection technique. Biomolecules can be …
Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect
Abstract A two-dimensional (2-D) technology computer-aided design (TCAD)-based
simulation study of the back bias in the ultrathin silicon-on-insulator (SOI) tunnel field-effect …
simulation study of the back bias in the ultrathin silicon-on-insulator (SOI) tunnel field-effect …
A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P+-Pocket and InAlAs-Block
H Liu, P Li, X Zhou, P Wang, Y Li, L Pan, W Zhang, Y Li - Micromachines, 2023 - mdpi.com
To give consideration to both chip density and device performance, an In0. 53Ga0. 47As
vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P+-pocket and …
vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P+-pocket and …
Frequency doubler based on ferroelectric tunnel field-effect transistor
In this study, a frequency doubler that consists of a ferroelectric tunnel field-effect transistor
(FeTFET) is proposed, and its operation is verified using technology computer-aided design …
(FeTFET) is proposed, and its operation is verified using technology computer-aided design …
Metal drain double-gate tunnel field effect transistor with underlap: Design and simulation
A Khan, SA Loan - Silicon, 2021 - Springer
In this paper, we propose and simulate a novel double gate tunnel field effect transistor (DG-
TFET) employing a metallic drain and a gate-drain underlap. The use of a metallic drain and …
TFET) employing a metallic drain and a gate-drain underlap. The use of a metallic drain and …
Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction
T Han, H Liu, S Chen, S Wang, W Li - Micromachines, 2019 - mdpi.com
A high performance doping-less tunneling field effect transistor with Ge/Si0. 6Ge0. 4/Si
heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping …
heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping …
Pocketed dual metal gate TFET: Design and simulation
A Khan, SA Loan - Materials Today Communications, 2023 - Elsevier
In this work, design and simulation of two novel tunnel field effect transistors with improved
DC and radio frequency (RF) performance has been conducted. The first proposed tunnel …
DC and radio frequency (RF) performance has been conducted. The first proposed tunnel …