Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

We present a detailed theoretical analysis of the electronic and optical properties of c-plane
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …

Cubic nitrides are candidate materials for next-generation optoelectronic applications as
they possess no internal fields and promise to cover large parts of the electromagnetic …

Abstract Two InGaN/GaN multiple quantum well (MQW)-based blue light emitting diodes
(LEDs) emitting photons at approximately the same wavelength, with different indium …

The accurate determination of compositional fluctuations is pivotal in understanding their
role in the reduction of efficiency in high indium content In x Ga 1–x N light emitting diodes …

The diffusion coefficient of holes can provide knowledge about carrier localization in (In, Ga)
N, where the carrier dynamics are altered by randomly fluctuating potential landscape. In …

In this study, indium concentration dependence on Volatile Organic Compounds (VOCs)
interaction were examined in InGaN-GaN multi quantum well structures (MQWs) grown on …

Nonclassical light emission, such as entangled and single-photon emission, has attracted
significant interest because of its importance in future quantum technology applications. In …

We modeled by kinetic Monte Carlo simulations the growth of InGaN alloys on perfectly
oriented and misoriented GaN surfaces. As the growth temperature increases, we show that …

The effect of internal strain on the luminescence properties of an InGaN single quantum well
(SQW) was investigated as a function of modification via an underlayer (UL). Single In 0.25 …