Comparison of LII derived soot temperature measurements with LII model predictions for soot in a laminar diffusion flame

DR Snelling, KA Thomson, F Liu, GJ Smallwood - Applied Physics B, 2009 - Springer
Laser-induced incandescence (LII) was used to derive temperatures of pulsed laser heated
soot particles from their thermal emission intensities detected at two wavelengths in a …

Atomic movies of laser-induced structural and phase transformations from molecular dynamics simulations

C Wu, ET Karim, AN Volkov, LV Zhigilei - Lasers in Materials Science, 2014 - Springer
Molecular dynamics (MD) simulations of laser-materials interactions are playing an
important role in investigation of complex and highly non-equilibrium processes involved in …

Computational study of the role of gas-phase oxidation in CW laser ablation of Al target in an external supersonic air flow

AN Volkov, LV Zhigilei - Applied Physics A, 2013 - Springer
Vapor expansion from Al target irradiated by a continuous wave laser into a supersonic
external air flow is investigated in kinetic simulations performed for values of pressure in the …

[PDF][PDF] Прямое статистическое моделирование процессов образования и роста кластеров при расширении пара от внезапно включенного сферического …

ГА Лукьянов, ОИ Симакова… - Журнал технической …, 2008 - journals.ioffe.ru
Синтез нанокластеров в процессе интенсивного расширения пара в вакуум или газ
низкого давления является одним из наиболее эффективных методов получения …

Direct statistical simulation of cluster formation and growth upon expansion of vapor from a sudden spherical source. I. Expansion into vacuum

GA Lukyanov, OI Simakova, NY Bykov - Technical Physics, 2008 - Springer
Processes of formation of silicon clusters upon expansion of vapor from a sudden source
into vacuum are considered. Vapor expansion and condensation are described using the …

Direct simulation Monte Carlo study of the formation and growth of clusters in the case of vapor expansion from a suddenly switched spherical source

NY Bykov, GA Lukyanov, OI Simakova - Journal of Applied Mechanics and …, 2009 - Springer
The processes of formation of silicon clusters in the case of vapor expansion from a
suddenly switched spherical source into an ambient inert gas are considered. Vapor …

Development of the Effective Reaction Model for Diamond Deposition Simulation within the Continuous Media Approach

DV Leshchev, YE Gorbachev - EPJ Web of Conferences, 2019 - epj-conferences.org
Three models for diamond growth process by the chemical vapor deposition of methane are
proposed. They differ in the degree of detail of the surface reaction description. The most …

Прямое статистическое моделирование процессов образования и роста кластеров при расширении пара от внезапно включенного сферического источника

НЮ Быков, ГА Лукьянов, ОИ Симакова - Прикладная механика и …, 2009 - mathnet.ru
Рассмотрены процессы образования кластеров кремния при расширении пара в
окружающем инертном газе от внезапно включенного сферического источника. Для …

Direct statistical simulation of cluster formation and growth upon expansion of vapor from a sudden spherical source. II. Expansion into gas

GA Lukyanov, OI Simakova, NY Bykov - Technical Physics, 2008 - Springer
Processes of formation of silicon clusters upon expansion of vapor from a sudden source
into a surrounding inert gas are considered. Vapor expansion and condensation are …

Computer modeling of gasdynamic control of nanoclusters growth

SV Kozyrev, GA Lukyanov, DV Leshchev… - Fullerenes …, 2006 - Taylor & Francis
Possibilities of gasdynamic control of nanoclusters growth process in a steady flow of a
carbon vapor and inert gas (helium) mixture in a cylindrical channel with a supersonic …