AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation
Herein, we report the design and implementation of planar and circular aluminium gallium
nitride/Gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) designs for pH …
nitride/Gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) designs for pH …
Design, fabrication and characterization of circular ZnO TFT for UV detection applications
AG Alharbi, N Shafi - Microelectronics Journal, 2023 - Elsevier
Here-in this work, we for the first time report a circular zinc oxide (ZnO) based thin film
transistor (TFT) and experimentally demonstrate its applicability as ultraviolet (UV-365 nm) …
transistor (TFT) and experimentally demonstrate its applicability as ultraviolet (UV-365 nm) …
Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates
AS Razeen, EX Tang, G Yuan, J Ong… - Optical Materials, 2024 - Elsevier
AlGaN/GaN based metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs)
are highly in demand for several applications that require thermal and mechanical stability …
are highly in demand for several applications that require thermal and mechanical stability …
AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
ASH Razeen - 2024 - dr.ntu.edu.sg
AlGaN/GaN HEMT structures have gained significant attention in recent years due to their
wide range of applications in power and optoelectronics, including electric vehicles …
wide range of applications in power and optoelectronics, including electric vehicles …