As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …

Electrical isolation of the billion or so active components in each integrated device is
achieved using shallow trench isolation (STI) which requires chemical mechanical …

Chemical mechanical polishing (CMP) is the most effective technique to obtain global and
local planarization of metal and brittle surfaces. Conventionally, CMP slurries contain strong …

Cerium oxide nanoparticles (CeNPs) are versatile materials with unique and unusual
properties that vary depending on their surface chemistry, size, shape, coating, oxidation …

The continuous reduction in feature size of integrated circuits has raised stricter material
removal selectivity and surface quality requirements for the chemical mechanical polishing …

This work describes the dissolution and corrosion of chemical vapor deposited (CVD) Co
films determined using aqueous mixtures of H 2 O 2, oxalic acid (OA) and nicotinic acid (NA) …

Hydrolytic reactions taking place at the surface of a silicon nitride (Si3N4) bioceramic were
found to induce instantaneous inactivation of Human herpesvirus 1 (HHV-1, also known as …

Using atomic force microscopy and scanning electron microscopy, the mechanical removal
mechanism of silicon with different exposure surfaces of cerium oxide (CeO 2) is studied. It is …

Surface inactivation of human microbial pathogens has a long history. The Smith Papyrus
(2600~ 2200 BC) described the use of copper surfaces to sterilize chest wounds and …

A previously developed aqueous cleaning solution (4.2 mol l− 1 each of H 2 O 2 and NH 4
OH) was found to be ineffective in cleaning oxide/nitride surfaces after contamination with …