In this article, a literature study has been conducted including 398 radar circuit elements
from 311 recent publications (mostly between 2010 and 2022) that have been reported …

This article presents a compact 300-GHz transmitter front end manufactured in a 130-nm
SiGe BiCMOS process. The transmitter consists of a 240-GHz amplifier multiplier chain …

This article presents a high-power wideband power amplifier (PA) with a four-way power-
combining technique for-band high-resolution radar. The power combiner is based on a two …

This article presents two kinds of low-cost antennas for D-band short-distance wireless
communication applications. Both the antennas are excited by a substrate integrated …

A miniaturized D-band frequency sixtupler using a mode analysis of the harmonics is
proposed to improve the output power of the CMOS process using a low driving signal. The …

This paper presents a monolithically integrated E-band amplifier multiplier chain (AMC)
developed in 130 nm SiGe BiCMOS process. This E-band AMC is composed of a 25 GHz 1 …

A multifeed metasurface-inspired antenna with power-combining capability is proposed for
D-band chip integration. The antenna consists of three patch layers including the bottom on …

With the increasing number of users and emerging new applications, the demand for mobile
data traffic is growing rapidly. The limited spectrum resources of the traditional microwave …

This article reports a two-stage differential structure power amplifier based on a 130 nm
SiGe process operating at 77 GHz. By introducing a tunable capacitor for amplitude and …

In view of the existing design challenges for Terahertz (THz) power amplifiers (PAs), the
common design methods and the efforts of the State Key Laboratory of Millimeter Wave …