In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

" Extreme environments" represents an important niche market for electronics and spans the
operation of electronic components in surroundings lying outside the domain of …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …

We review the emerging reliability issues associated with high-performance SiGe HBT
technologies which are being increasingly deployed in a wide variety of mixed-signal circuit …

This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits
(ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown …

This paper provides the details of a study on the effects of electron irradiation on two Low
Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility …

The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-
junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose …

In this paper, a characterization and comparison between the effects of Electron irradiation
on the gain of low noise amplifiers (LNAs) implemented Silicon-Germanium (SiGe) …

We have studied the ionization damage produced by gamma irradiation on transistors from
three different varieties of SiGe: C HBT technologies from Innovation for High Performance …