Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Integrated lasers on silicon at communication wavelength: a progress review
With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …
has been developed and applied for high‐bandwidth data transmission. Contributed by the …
Optically pumped GeSn microdisk lasers on Si
The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …
demand of low power consumption requires new ways of data communication. Photonic …
Double peak emission in lead halide perovskites by self-absorption
Despite the rapidly increasing efficiencies of perovskite solar cells, the optoelectronic
properties of this material class are not completely understood. Especially when measured …
properties of this material class are not completely understood. Especially when measured …
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
The development of non-equilibrium group IV nanoscale alloys is critical to achieving new
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …
The thermal stability of epitaxial GeSn layers
P Zaumseil, Y Hou, MA Schubert, N Von Den Driesch… - APL Materials, 2018 - pubs.aip.org
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si
heterostructures under annealing. We investigated strained and partially relaxed epi-layers …
heterostructures under annealing. We investigated strained and partially relaxed epi-layers …
Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
The simultaneous control of lattice strain, composition, and microstructure is crucial to
establish high-quality, direct bandgap GeSn semiconductors. Herein, we demonstrate that …
establish high-quality, direct bandgap GeSn semiconductors. Herein, we demonstrate that …
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
Group IV semiconductor optoelectronic devices are now possible by using strain-free direct
band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here …
band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here …
Advanced GeSn/SiGeSn group IV heterostructure lasers
N von den Driesch, D Stange, D Rainko… - Advanced …, 2018 - Wiley Online Library
Growth and characterization of advanced group IV semiconductor materials with CMOS‐
compatible applications are demonstrated, both in photonics. The investigated …
compatible applications are demonstrated, both in photonics. The investigated …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …