In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …

The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

Despite the rapidly increasing efficiencies of perovskite solar cells, the optoelectronic
properties of this material class are not completely understood. Especially when measured …

The development of non-equilibrium group IV nanoscale alloys is critical to achieving new
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …

We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si
heterostructures under annealing. We investigated strained and partially relaxed epi-layers …

The simultaneous control of lattice strain, composition, and microstructure is crucial to
establish high-quality, direct bandgap GeSn semiconductors. Herein, we demonstrate that …

Group IV semiconductor optoelectronic devices are now possible by using strain-free direct
band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here …

Growth and characterization of advanced group IV semiconductor materials with CMOS‐
compatible applications are demonstrated, both in photonics. The investigated …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …