Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging
applications beyond the scope of silicon-based complementary metal oxide semiconductors …

With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

The search for alternatives to traditional Li-ion batteries has sparked interest in the chemistry
and manufacturing of solid-state Li-ion conductors. Li-ion conductors are traditionally …

Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …

Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …

In this paper, the historical effects and benefits of Moore's law for semiconductor
technologies are reviewed, and it is offered that the rapid learning curve obtained to the …