500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit
The authors' present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐
semiconductor field‐effect transistor (LDMOSFET) with β‐Ga2O3, which is a large bandgap …
semiconductor field‐effect transistor (LDMOSFET) with β‐Ga2O3, which is a large bandgap …
[HTML][HTML] 500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit
The authors' present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐
semiconductor field‐effect transistor (LDMOSFET) with β‐Ga 2 O 3, which is a large …
semiconductor field‐effect transistor (LDMOSFET) with β‐Ga 2 O 3, which is a large …
Improving Specific On-Resistance and Breakdown Voltage in SOI LDMOSs with Several N-Type Windows
A Sohrabi-Movahed, AA Orouji - Journal of Electronic Materials, 2023 - Springer
We propose a lateral double-diffused metal oxide semiconductor (LDMOS) structure in
which several N-type windows with higher densities than its drift region are located deep in …
which several N-type windows with higher densities than its drift region are located deep in …
Design and research of high voltage β-Ga2O3/4H-SiC heterojunction LDMOS
D Bian, S Luan - Engineering Research Express, 2024 - iopscience.iop.org
In recent years, gallium oxide (Ga 2 O 3), one of the ultra-wide band-gap semiconductor
materials, has been regarded as one of the most promising materials in the field of high …
materials, has been regarded as one of the most promising materials in the field of high …
A Modulation Electric Field Technique to Improve the LD-MOSFET Performance with a P-type Ga2O3 Pocket
This study presents a modulation technique of electric field to improve the electrical
performances of silicon-on-insulator (SOI) laterally diffused metal–oxide–semiconductor …
performances of silicon-on-insulator (SOI) laterally diffused metal–oxide–semiconductor …
β-Ga2O3 Based Bulk-Planar Junctionless Transistor for Superior Electrostatic Integrity at Sub-7nm Technology
A Aggarwal, H Marothya - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
In this work, we propose a bulk-planar junctionless transistor using β-Ga 2 O 3 as device
layer material (β-Ga 2 O 3-BPJLT) downscaled till 7nm and compared it with conventional …
layer material (β-Ga 2 O 3-BPJLT) downscaled till 7nm and compared it with conventional …
[PDF][PDF] 500 V Breakdown Voltage in β-Ga 2 O 3 LDMOSFET With 108 MW/cm 2 Power Figure of Merit
Our work presents a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor
eld-effect transistor (LDMOSFET) with β-Ga2O3, which is a large bandgap semiconductor (β …
eld-effect transistor (LDMOSFET) with β-Ga2O3, which is a large bandgap semiconductor (β …