The discovery of 2D layered MoSi2N4 and WSi2N4 without knowing their 3D parents by
chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA2Z4 system …

Recent experimental synthesis of ambient-stable MoSi 2 N 4 monolayer has garnered
enormous research interest. The intercalation morphology of MoSi 2 N 4—composed of a …

Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …

Semiconducting two-dimensional materials with chemical formula MoSi2X4 (X= N, P, or As)
are studied by means of atomistic ground-and excited-state first-principles simulations. Full …

It has long been expected that the coexistence of ferroelectric and ferrovalley polarizations
in one magnetic semiconductor could offer the possibility to revolutionize electronic devices …

Strain is an effective method to tune the electronic properties of two-dimensional (2D)
materials and can induce novel phase transition. Recently, the 2D MA 2 Z 4 family of …

Valley-related multiple topological phase transitions have attracted significant attention
because they provide significant opportunities for fundamental research and practical …

The realization of multiferroic materials offers the possibility of multifunctional electronic
device design. However, the coupling between the multiferroicity and piezoelectricity in …

Electronic correlations could have significant impact on the material properties. They are
typically pronounced for localized orbitals and enhanced in low-dimensional systems, so …

The sustainable development of next‐generation device technology is paramount in the face
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …