[PDF][PDF] Observation of in-plane shear stress fields in off-axis SiC wafers by birefringence imaging
S Harada, K Murayama - Journal of Applied Crystallography, 2022 - journals.iucr.org
For the nondestructive characterization of SiC wafers for power device application,
birefringence imaging is one of the promising methods. In the present study, it is …
birefringence imaging is one of the promising methods. In the present study, it is …
Research Progress of Dislocations in SiC Single Crystal.
Z Jiaxin, P Yan, C Xiufang, XIE Xuejian… - Journal of Synthetic …, 2022 - search.ebscohost.com
As the representative of the third generation semiconductor materials, SiC has excellent
physical and chemical properties. With the development of materials and applications, SiC …
physical and chemical properties. With the development of materials and applications, SiC …
Non-destructive detection of sub-micrometer-sized micropipes in silicon carbide using mirror electron microscope
K Kobayashi, Y Mori, K Konishi, M Hasegawa… - Journal of Applied …, 2023 - pubs.aip.org
A non-destructive method for detecting sub-micrometer-sized micropipes on an entire wafer
surface is investigated. Since it is difficult to detect sub-micrometer-sized micropipes due to …
surface is investigated. Since it is difficult to detect sub-micrometer-sized micropipes due to …
Non-destructive identification of edge-component burgers vector of threading dislocations in SiC wafers by birefringence imaging
S Harada, Y Matsubara, K Murayama - Diamond and Related Materials, 2023 - Elsevier
Non-destructive characterization of crystalline defects in SiC wafers is important for
manufacturing high-performance SiC power devices with high productivity. The present …
manufacturing high-performance SiC power devices with high productivity. The present …