The development of new functional memories using emerging nonvolatile devices has been
widely investigated. Spin-transfer torque magnetoresistive random access memory (STT …

Spintronic devices are regarded as a promising solution for future computing and memory
technologies. They are non-volatile, resilient to radiation, and compatible with the CMOS …

A magnetic non-volatile flip-flop (MNV-FF) design, with the assistance of voltage-controlled
magnetic anisotropy (VCMA) effect, is proposed for low-power and high-speed applications …

In this paper, we propose a non-volatile stochastic computing (SC) scheme using voltage-
controlled magnetic tunnel junction (VC-MTJ) and negative differential resistance (NDR) …

Currently, commercial semiconductor-based memories face the problem of static energy
consumption caused by leakage currents. Magnetoelectric random access memory …

With scaling technology, emerging nonvolatile devices, and data-intensive applications,
memory faults have become a major reliability concern for computing systems. With various …

While nonlinear functions such as square and square root are critical for fields such as
signal processing and machine learning, computation of these functions presents …

We demonstrate spin-orbit torque (SOT) driven multi-state magnetization switching in Co/Pt
Hall crosses in the presence of varying externally applied in-plane (IP) bias fields from room …

As the speed gap of the modern processor and the off-chip main memory enlarges, on-chip
cache capacity increases to sustain the performance scaling. As a result, the cache power …

Temperature and wafer-level process variations significantly degrade operation efficiency of
Spin-transfer torque random access memory (STT-MRAM) and magnetoelectric random …