Charge-Based Trans-Capacitance Model for SiO2/HfO2 Based Nano Scale Trigate FinFET Including Quantum Mechanical Effect
A charge based trans-capacitance model is proposed for undoped or lightly doped Trigate
FinFET. The drain current continuity principle and the Ward-Dutton linear charge partition …
FinFET. The drain current continuity principle and the Ward-Dutton linear charge partition …
Metal gate work function engineering for nano-scaled trigate FinFET
M Lalruatfela, S Panchanan, R Maity… - Microsystem Technologies, 2024 - Springer
Diminution of leakage current is essential for the semiconductor device operating in the
nanometer regime. This paper aims to analyse the consequence of metal work function on …
nanometer regime. This paper aims to analyse the consequence of metal work function on …
Impact of varying channel length on Analog/RF performances in a novel n-type Silicon-based DG-JLT.
Shrinking MOSFETs suffer performance hits due to short-channel effects and leakage.
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …