Phase‐change random access memory (PCRAM) is one of the most technologically mature
candidates for next‐generation non‐volatile memory and is currently at the forefront of …

Compact and power-efficient plastic electronic synapses are of fundamental importance to
overcoming the bottlenecks of developing a neuromorphic chip. Memristor is a strong …

Phase change materials based on chalcogenide alloys play an important role in optical and
electrical memory devices. Both applications rely on the reversible phase transition of these …

Using first-principles calculations, we identify the mechanisms that lead to the lowest energy
structures for the stable and metastable (GeTe) m (Sb 2 Te 3) n (GST) compounds, namely …

Disorder-induced electron localization and metal-insulator transitions (MITs) have been a
very active research field starting from the seminal paper by Anderson half a century ago …

In the big data era, data storage is one of the cores in the whole information chain, which
includes production, transfer, sharing, and finally processing. Over the years, the growth of …

In this work, the local structure of metastable Ge 2 Sb 2 Te 5 (GST) phase change thin films
crystallised by laser irradiation of amorphous GST films is studied by state-of-the-art …

Early stages of nucleus-driven crystallization of the prototype phase change material Ge 2
Sb 2 Te 5 have been studied by density functional/molecular dynamics simulations for …

The thermal conductivity of Ge 2 Sb 2 Te 5 (GST) layers, as well as the thermal boundary
resistance at the interface between the GST and amorphous Si O 2⁠, was measured using a …

Chalcogenide phase change materials, such as G e 1 S b 2 T e 4 (GST), are of tremendous
importance in emerging data storage technology, which takes advantage of rapid and …