Ohmic contacts to Gallium Nitride materials
In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability
F Zeng, JX An, G Zhou, W Li, H Wang, T Duan, L Jiang… - Electronics, 2018 - mdpi.com
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary
features in the applications of high power and high frequency devices. In this paper, we …
features in the applications of high power and high frequency devices. In this paper, we …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN
SN Mohammad - Journal of Applied Physics, 2004 - pubs.aip.org
GaN and related III–V nitrides have been applied to realize optoelectronic devices, such as
light emitting diodes, ultraviolet photodetectors, and laser diodes. 1 They have been …
light emitting diodes, ultraviolet photodetectors, and laser diodes. 1 They have been …
The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕ GaN
B Van Daele, G Van Tendeloo, W Ruythooren… - Applied Physics …, 2005 - pubs.aip.org
A standard metallization scheme for the formation of Ohmic contacts on n-type GaN does
exist. It has the following multilayer structure: Ti∕ Al∕ metal∕ Au. Ti is known to extract N …
exist. It has the following multilayer structure: Ti∕ Al∕ metal∕ Au. Ti is known to extract N …
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
Structural coloration techniques have improved display science due to their high durability in
terms of resistance to bleaching and abrasion, and low energy consumption. Here, we …
terms of resistance to bleaching and abrasion, and low energy consumption. Here, we …
[HTML][HTML] Performance and reliability of β-Ga2O3 Schottky barrier diodes at high temperature
Beta-gallium oxide (β-Ga 2 O 3) is an ultrawide bandgap semiconductor that has potential
for power electronic applications and devices operating at high temperatures. Particularly …
for power electronic applications and devices operating at high temperatures. Particularly …
Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants
Nanowire–nanocluster hybrid chemical sensors were realized by functionalizing gallium
nitride (GaN) nanowires (NWs) with titanium dioxide (TiO 2) nanoclusters for selectively …
nitride (GaN) nanowires (NWs) with titanium dioxide (TiO 2) nanoclusters for selectively …
Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence
BD White, M Bataiev, SH Goss, X Hu… - … on Nuclear Science, 2003 - ieeexplore.ieee.org
We have characterized high-electron mobility transistors and corresponding unprocessed
material as a function of 1.8 MeV proton fluence. Electrical data shows degradation of the …
material as a function of 1.8 MeV proton fluence. Electrical data shows degradation of the …
Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN
The temperature dependence of the specific resistance ρ c in annealed Ti∕ Al∕ Ni∕ Au
contacts on n-type GaN was monitored, obtaining information on the current transport …
contacts on n-type GaN was monitored, obtaining information on the current transport …