High-κ gate dielectrics: Current status and materials properties considerations
GD Wilk, RM Wallace, JM Anthony - Journal of applied physics, 2001 - pubs.aip.org
Many materials systems are currently under consideration as potential replacements for SiO
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …
Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …
strength, a large band gap, a high melting point, and a native, low defect density interface …
Reliability limits for the gate insulator in CMOS technology
JH Stathis - IBM Journal of Research and Development, 2002 - ieeexplore.ieee.org
Aggressive scaling of the thickness of the gate insulator in CMOS transistors has caused the
quality and reliability of ultrathin dielectrics to assume greater importance. This paper …
quality and reliability of ultrathin dielectrics to assume greater importance. This paper …
Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
JH Stathis - IEEE Transactions on device and materials …, 2001 - ieeexplore.ieee.org
The microelectronics industry owes its considerable success largely to the existence of the
thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin …
thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin …
Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
G He, L Zhu, Z Sun, Q Wan, L Zhang - Progress in Materials Science, 2011 - Elsevier
Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …
scaling technology in recent years, innovation in transistor structures and integration of …
Ultrathin gate oxide reliability: Physical models, statistics, and characterization
JS Suehle - IEEE Transactions on Electron Devices, 2002 - ieeexplore.ieee.org
The present understanding of wear-out and breakdown in ultrathin (t/sub ox/< 5.0 nm)
SiO/sub 2/gate dielectric films and issues relating to reliability projection are reviewed in this …
SiO/sub 2/gate dielectric films and issues relating to reliability projection are reviewed in this …
Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
The influence of FET gate oxide breakdown on the performance of a ring oscillator circuit is
studied using statistical tools, emission microscopy, and circuit analysis. It is demonstrated …
studied using statistical tools, emission microscopy, and circuit analysis. It is demonstrated …
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability
The properties of the so-called time dependent dielectric breakdown (TDDB) of silicon
dioxide-based gate dielectric for microelectronics technology have been investigated and …
dioxide-based gate dielectric for microelectronics technology have been investigated and …
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques
EY Wu, RP Vollertsen - IEEE Transactions on Electron Devices, 2002 - ieeexplore.ieee.org
Critically examined several important aspects concerning the experimental determination of
Weibull shape factors (slopes). Statistical characteristics of breakdown distribution such as …
Weibull shape factors (slopes). Statistical characteristics of breakdown distribution such as …
Electron transport through broken down ultra-thin SiO2 layers in MOS devices
When the gate insulator of a metal–oxide–semiconductor structure is subjected to electrical
stress, traps or defects are progressively generated inside the oxide that eventually lead to …
stress, traps or defects are progressively generated inside the oxide that eventually lead to …