Enhancement of Spin Polarization in Two-Dimensional Electron Gases at Patterned LaAlO3/SrTiO3 Interfaces

Y Chen, R Liu, X Zhang, W Zhuang… - The Journal of …, 2022 - ACS Publications
Spin-polarized two-dimensional electron gases (2DEGs) at the interfaces of SrTiO3-based
correlated oxides have attracted tremendous attention in electronics and spintronics …

Concurrent weak localization and double Schottky barrier across a grain boundary in bicrystal

M Egilmez, S El-Khatib, F Mustafa, S Ahmad… - Physical Review B, 2023 - APS
Stoichiometric SrTiO 3 (STO) is a wide band-gap insulator in which oxygen deficiency
generates a low-temperature metallic ferromagnetic state. Here, we report weak …

[HTML][HTML] High-mobility spin-polarized quasi-two-dimensional electron gas and large low-field magnetoresistance at the interface of EuTiO3/SrTiO3 (110) …

ZC Wang, ZN Li, M Ye, W Zhao, RK Zheng - APL Materials, 2024 - pubs.aip.org
High-mobility spin-polarized two-dimensional electron gas (2DEG) at the interfaces of
complex oxide heterostructures provide great potential for spintronic device applications …

Enhancement of the Rashba Effect in a Conducting SrTiO3 Surface by MoO3 Capping

S Noh, D Choe, H Jin, JW Yoo - ACS Applied Materials & …, 2022 - ACS Publications
Systems having inherent structural asymmetry retain the Rashba-type spin–orbit interaction,
which ties the spin and momentum of electrons in the band structure, leading to coupled …

Spin injection in the doped bad metal

P Graziosi, I Bergenti, L Vistoli, F Galassi… - Physical Review …, 2023 - APS
In this paper, we demonstrate the capability to establish spin-polarized currents in doped
SrTi O 3 (STO). The results are based on the study of charge and spin transport in STO …

Second-order charge and spin transport in LaO/STO system in the presence of cubic Rashba spin orbit couplings

ZB Siu, A Kundu, MA Jalil - New Journal of Physics, 2024 - iopscience.iop.org
Under an applied electric field, certain non-centrosymmetric materials with broken time-
reversal symmetry may exhibit non-reciprocal transport behavior in which the charge and …

Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure

J Keum, KX Zhang, S Cheon, H Kim, J Cui… - arXiv preprint arXiv …, 2025 - arxiv.org
Magnetization switching by charge current without a magnetic field is essential for device
applications and information technology. It generally requires a current-induced out-of-plane …