[HTML][HTML] AlGaN nanowires for ultraviolet light-emitting: recent progress, challenges, and prospects
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN)
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
Three-dimensional quantum confinement of charge carriers in self-organized AlGaN nanowires: A viable route to electrically injected deep ultraviolet lasers
We report on the molecular beam epitaxial growth and structural characterization of self-
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
[HTML][HTML] Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm
We report AlGaN nanowire light emitting diodes (LEDs) operating in the ultraviolet-C band.
The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that …
The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that …
[HTML][HTML] Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …
attention for deep ultraviolet optoelectronics. However, due to the strong compositional …
An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature
In this work, we report on the demonstration of an electrically injected AlGaN nanowire laser
operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are …
operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are …
[HTML][HTML] Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes
Compared to the extensive studies on the efficiency droop of InGaN visible light emitting
diodes (LEDs), the efficiency droop of AlGaN deep ultraviolet (UV) LEDs is much less …
diodes (LEDs), the efficiency droop of AlGaN deep ultraviolet (UV) LEDs is much less …
Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices
There have been recent research advances in AlGaN-based self-assembled nanowires
(NWs) as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted …
(NWs) as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted …
Monolayer‐thick GaN/AlN multilayer heterostructures for deep‐ultraviolet optoelectronics
Recent progress in the development of monolayer (ML)‐thick GaN/AlN multilayer
heterostructures for deep‐ultraviolet (UV) optoelectronics is reviewed. Analysis of both …
heterostructures for deep‐ultraviolet (UV) optoelectronics is reviewed. Analysis of both …
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
I Dimkou, A Harikumar, F Donatini… - …, 2020 - iopscience.iop.org
In this paper, we describe the design and characterization of 400 nm long (88 periods) Al x
Ga 1− x N/AlN (0≤ x≤ 0.1) quantum dot superlattices deposited on self-assembled GaN …
Ga 1− x N/AlN (0≤ x≤ 0.1) quantum dot superlattices deposited on self-assembled GaN …