Hot-electron transport and noise in GaN two-dimensional channels for HEMTs
A Matulionis - IEICE transactions on electronics, 2006 - search.ieice.org
Accumulation of non-equilibrium longitudinal optical (LO) phonons (termed hot phonons) is
considered as a possible cause for limitation of frequency of operation of GaN-based high …
considered as a possible cause for limitation of frequency of operation of GaN-based high …
[PDF][PDF] Yet another hydrodynamic model with correlated parameters for silicon devices
M El-Saba - Microelectronics and Solid State Electronics, 2012 - academia.edu
In this paper we present a complete hydrodynamic model (HDM) describing the transport of
charge carriers in semiconductor devices with arbitrary band structure. The model is …
charge carriers in semiconductor devices with arbitrary band structure. The model is …
[PDF][PDF] Monte-Carlo study of hot electron transport in bulk GaN
Velocity-field characteristics and power dissipation of bulk wurtzite GaN at high electric field
have been investigated and comparison has been made between the theoretical data and …
have been investigated and comparison has been made between the theoretical data and …
High-Field Transport in Nitride Channels: a Hot-Phonon Bottleneck
A Matulionis, LF Eastman, J Liberis - … , July 25–29, 2005, Chicago, USA, 2006 - Springer
High-Field Transport in Nitride Channels: a Hot- Phonon Bottleneck Page 1 High-Field
Transport in Nitride Channels: a HotPhonon Bottleneck A. Matulionis^ LF Eastman^, J …
Transport in Nitride Channels: a HotPhonon Bottleneck A. Matulionis^ LF Eastman^, J …
[引用][C] KARŠTŲJŲ FONONŲ SAVYBIŲ SUGRETINIMAS NITRIDŲ IR ARSENIDŲ DVIMAČIUOSE KANALUOSE
A Matulionis, V Aninkevičius, L Ardaravičius, R Katilius…