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TA Langdo, MT Currie, R Hammond… - US Patent …, 2006 - Google Patents
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Methods of forming strained-semiconductor-on-insulator finFET device structures
AJ Lochtefeld, TA Langdo, R Hammond… - US Patent …, 2006 - Google Patents
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Hybrid fin field-effect transistor structures and related methods
MT Currie - US Patent 8,183,627, 2012 - Google Patents
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CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
E Fitzgerald, N Gerrish - US Patent App. 10/266,339, 2003 - Google Patents
(57) ABSTRACT A CMOS inverter having a heterostructure including a Si Substrate, a
relaxed SiGe layer on the Si Substrate, and a Strained Surface layer on said relaxed SiGe …
relaxed SiGe layer on the Si Substrate, and a Strained Surface layer on said relaxed SiGe …
Control of strain in device layers by prevention of relaxation
MT Currie - US Patent 7,335,545, 2008 - Google Patents
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Control of strain in device layers by selective relaxation
MT Currie - US Patent 7,307,273, 2007 - Google Patents
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RF circuits including transistors having strained material layers
G Braithwaite, R Hammond, M Currie - US Patent 7,709,828, 2010 - Google Patents
(52) US Cl................... 257/24; 257/219; 257/E29. 012 (58) Field of Classification
Search.................... 257/24 See application file for complete search history. Circuits for …
Search.................... 257/24 See application file for complete search history. Circuits for …
Hybrid semiconductor-on-insulator structures and related methods
M Currie - US Patent App. 11/000,566, 2006 - Google Patents
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Shallow trench isolation process
MT Currie, AJ Lochtefeld - US Patent 7,504,704, 2009 - Google Patents
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Process for producing semiconductor article using graded epitaxial growth
ZY Cheng, EA Fitzgerald, DA Antoniadis… - US Patent …, 2003 - Google Patents
(57) ABSTRACT A process for producing monocrystalline Semiconductor layers. In an
exemplary embodiment, a graded SiGe (X increases from 0 to y) is deposited on a first …
exemplary embodiment, a graded SiGe (X increases from 0 to y) is deposited on a first …