AlGaN devices and growth of device structures
KA Jones, TP Chow, M Wraback, M Shatalov… - Journal of Materials …, 2015 - Springer
The structure of a number of GaN/AlGaN devices and their associated material growth and
processing issues are examined in some detail, and extrapolations are made to predict what …
processing issues are examined in some detail, and extrapolations are made to predict what …
CMOS process-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon
M Van Hove, S Boulay, SR Bahl… - IEEE Electron …, 2012 - ieeexplore.ieee.org
We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-
insulator-semiconductor high-electron-mobility transistors. The process starts from a 150 …
insulator-semiconductor high-electron-mobility transistors. The process starts from a 150 …
Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices
(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …
Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- Buffer Thickness by Local Substrate Removal
P Srivastava, J Das, D Visalli… - IEEE Electron …, 2010 - ieeexplore.ieee.org
In this letter, we present a local substrate removal technology (under the source-to-drain
region), reminiscent of through-silicon vias and report on the highest ever achieved …
region), reminiscent of through-silicon vias and report on the highest ever achieved …
High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure
Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …
P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers
Within the last years, III-nitride-based devices have been demonstrated with exceptional
performance. There is, however, a severe lack of knowledge when it comes fabrication of p …
performance. There is, however, a severe lack of knowledge when it comes fabrication of p …
High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric
We have demonstrated high-performance InAlN/GaN MOS high-electron-mobility-transistors
(MOSHEMTs) with various channel lengths () of 85–250 nm using atomic-layer-epitaxy …
(MOSHEMTs) with various channel lengths () of 85–250 nm using atomic-layer-epitaxy …
High Drain Current Density E-Mode /AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit
JJ Freedsman, T Kubo, T Egawa - IEEE transactions on electron …, 2013 - ieeexplore.ieee.org
In this paper, we report on the enhancement-mode (E-mode) Al 2 O 3/AlGaN/GaN metal-
oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si. The E-mode …
oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si. The E-mode …
1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI platform
We demonstrate high-voltage depletion-mode and enhancement-mode (E-mode)
AlGaN/GaN high-electron-mobility transistors (HEMTs) on a GaN-on-silicon-on-insulator …
AlGaN/GaN high-electron-mobility transistors (HEMTs) on a GaN-on-silicon-on-insulator …
Reliability issues of GaN based high voltage power devices
J Wuerfl, E Bahat-Treidel, F Brunner, E Cho… - Microelectronics …, 2011 - Elsevier
GaN based power devices for high efficiency switching applications in modern power
electronics are rapidly moving into the focus of world wide research and development …
electronics are rapidly moving into the focus of world wide research and development …