Two-dimensional dopant profiling by scanning capacitance microscopy

CC Williams - Annual review of materials science, 1999 - annualreviews.org
▪ Abstract The scanning capacitance microscope (SCM) provides a direct method for
mapping the dopant distribution in a semiconductor device on a 10 nm scale. This capability …

Advances in AFM for the electrical characterization of semiconductors

RA Oliver - Reports on Progress in Physics, 2008 - iopscience.iop.org
Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy

P De Wolf, R Stephenson, T Trenkler… - Journal of Vacuum …, 2000 - pubs.aip.org
An overview of the existing two-dimensional carrier profiling tools using scanning probe
microscopy includes several scanning tunneling microscopy modes, scanning capacitance …

Progress in assessing surface and subsurface integrity

DA Lucca, E Brinksmeier, G Goch - CIRP annals, 1998 - Elsevier
Recent progress in both the development of characterization tools for the assessment of
surface integrity, and the experimental examination of surface alteration, is reported …

A secure camouflaged threshold voltage defined logic family

B Erbagci, C Erbagci, NEC Akkaya… - 2016 IEEE International …, 2016 - ieeexplore.ieee.org
A myriad of security vulnerabilites can be exposed via the reverse engineering of the
integrated circuits contained in electronics systems. The goal of IC reverse engineering is to …

Cross-sectional scanning tunneling microscopy

ET Yu - Chemical reviews, 1997 - ACS Publications
Since its invention in the early 1980, scanning tunneling microscopy1-4 (STM) and
techniques such as atomic force microscopy5 (AFM) that have evolved from it have become …

Threshold-dependent camouflaged cells to secure circuits against reverse engineering attacks

MIM Collantes, M El Massad… - 2016 IEEE Computer …, 2016 - ieeexplore.ieee.org
With current tools and technology, someone who has physical access to a chip can extract
the detailed layout of the integrated circuit (IC). By using advanced visual imaging …

How multi-threshold designs can protect analog IPs

A Ash-Saki, S Ghosh - 2018 IEEE 36th International …, 2018 - ieeexplore.ieee.org
Analog Integrated Circuits (ICs) are one of the top targets for counterfeiting. However, the
security of analog Intellectual Property (IP) is not well investigated as its digital counterpart …

Charge trap dynamics in a layer on Si by scanning capacitance microscopy

CJ Kang, GH Buh, S Lee, CK Kim, KM Mang… - Applied physics …, 1999 - pubs.aip.org
Trapped electrons and holes, and their dynamics, were visualized from spatially resolved
capacitance–voltage (C–V) curves and dC/dV images using scanning capacitance …

Quantitative measurement of two-dimensional dopant profile by cross-sectional scanning capacitance microscopy

JS McMurray, J Kim, CC Williams - … of Vacuum Science & Technology B …, 1997 - pubs.aip.org
Quantitative two-dimensional dopant profiling of a gatelike structure is achieved by scanning
capacitance microscopy (SCM). A processed silicon wafer is sectioned then polished such …