Abstract Herein we investigate a (001)-oriented GaAs1− x Bi x/GaAs structure possessing Bi
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …

Compositional inhomogeneities in III-V alloys heavily influence the device performance. This
work presents evidence for Ga droplets inducing inhomogeneities in the Bi composition …

Bismuth containing semiconductor alloys are of increasing interest for their potential
applications as infrared devices, though material quality in these materials has often proven …

The control of Bi incorporation and material properties in III-V-Bi alloys has proved
challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present …

The study investigated the impact of introducing bismuth into the GaAs capping layer (CL)
on InAs quantum dots (QDs) to enhance their QD properties. Three different time …

We study structural properties and surface formation of undoped, n-and p-type doped
GaAsBi alloys with various bismuth compositions using Micro-Raman, Fourier Transform …

This paper investigates the effect of GaAsBi strain reduction layers (SRLs) on InAs QDs with
different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs …

Using transmission electron microscopy, we present an in-depth microstructural analysis of
a series of Ga (Sb, Bi) epilayers and Ga (Sb, Bi)/GaSb quantum wells grown on GaSb (001) …

Abstract Kinetic Monte Carlo (KMC) simulations were developed to describe all the kinetic
processes occurring during epitaxial growth on vicinal surfaces and to interpret the formation …

The effects of a 45 min anneal at 800 C on the physical properties and microstructure of a
five-period GaAs 1− x Bi x/GaAs 1− y Bi y superlattice with y≠ x were studied using room …