The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies
Using ab initio density-functional total energy and molecular-dynamics simulations, we study
the effects of various forms of nitrogen postdeposition anneal (PDA) on the electric …
the effects of various forms of nitrogen postdeposition anneal (PDA) on the electric …
Fullerenes, carbon nanotubes, and graphene for molecular electronics
With the constant growing complexity of electronic devices, the top-down approach used
with silicon based technology is facing both technological and physical challenges. Carbon …
with silicon based technology is facing both technological and physical challenges. Carbon …
Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs
E Atanassova, A Paskaleva - Microelectronics Reliability, 2007 - Elsevier
The present status, successes, challenges and future of Ta2O5, and mixed Ta2O5-based
high-k layers as active component in storage capacitors of nanoscale DRAMs are …
high-k layers as active component in storage capacitors of nanoscale DRAMs are …
Advanced system for nanofabrication and nanomanipulation based on shape memory alloy
S Von Gratowski, V Koledov, V Shavrov… - Frontiers in Materials …, 2018 - Springer
Miniaturization is the central theme in modern fabrication technology. Many of the
components used in modern products are becoming smaller and smaller. Here it is reported …
components used in modern products are becoming smaller and smaller. Here it is reported …
Oxygen self-diffusion mechanisms in monoclinic revealed and quantified by density functional theory, random walk analysis, and kinetic Monte Carlo calculations
In this work, we quantify oxygen self-diffusion in monoclinic-phase zirconium oxide as a
function of temperature and oxygen partial pressure. A migration barrier of each type of …
function of temperature and oxygen partial pressure. A migration barrier of each type of …
Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors
This work explores the atomic-scale nature of defects within hafnium dioxide/silicon
dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are …
dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are …
[图书][B] Nanoelectronics and photonics: from atoms to materials, devices, and architectures
Nanoelectronics and Photonics: From Atoms to Materials, Devices, and Architectures
provides a description of the core elements and challenges of advanced and future …
provides a description of the core elements and challenges of advanced and future …
Energy deficit of pulsed-laser field-ionized and field-emitted ions from non-metallic nano-tips
The energy deficit of pulsed-laser field-evaporated ions and field-ionized atoms of an inert
gas from the surface of a non-metallic nano-metric tip is reported as a function of the laser …
gas from the surface of a non-metallic nano-metric tip is reported as a function of the laser …
Optical properties of La-based high-K dielectric films
We have characterized thin films of La Sc O 3 and La Al O 3 which were grown by molecular
beam deposition on Si substrates. Samples of La Sc O 3 were also grown by pulsed laser …
beam deposition on Si substrates. Samples of La Sc O 3 were also grown by pulsed laser …
[图书][B] Semiconductor Nanotechnology
Energy and information are essential, and interconnected, elements for the development of
human society. Transmission, processing, and storage of information requires energy …
human society. Transmission, processing, and storage of information requires energy …