Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n-doping
performance, excellent conductivity, and high electron hall mobility, which is considered as a …

Transition metal oxides have gained substantial attention in the previous decade by virtue of
their distinctive physical and chemical properties. Amidst all, tungsten oxide (WO 3) is …

Molybdenum oxide is used as a low-resistance anode interfacial layer in applications such
as organic light emitting diodes and organic photovoltaics. However, little is known about the …

In this work a hydrogenated under-stoichiometric tungsten oxide is introduced as an efficient
anode interlayer in organic photovoltaics (OPVs). The benefits of hydrogen incorporation …

Nanocrystalline WO3 thin films were produced by sputter-deposition by varying the ratio of
argon to oxygen in the reactive gas mixture during deposition. The surface chemistry …

Thin films of tungsten trioxide (WO 3) have been prepared by RF reactive magnetron
sputtering of tungsten target at different substrate temperatures in the range 303–673 K and …

New complexes MoO2 (tBuAMD) 2 (1) and WO2 (tBuAMD) 2 (2)(AMD= acetamidinato) are
synthesized and fully characterized as precursors for atomic layer deposition (ALD). They …

Thin films of pure and molybdenum (Mo)-doped tungsten trioxide (WO 3) were deposited on
indium tin oxide (ITO)-coated glass and Corning glass substrates by RF magnetron …

The influence of the oxygen substoichiometry and of the hydrogen incorporation on the
electronic structure of amorphous tungsten oxide films was investigated. It was found that …

Reduced molybdenum peroxides with varying degrees of reduction were synthesized
following a modified sol–gel peroxo method and the respective films were employed as …