Metal–insulator–metal diodes: A potential high frequency rectifier for rectenna application
S Shriwastava, CC Tripathi - Journal of Electronic Materials, 2019 - Springer
Abstract Metal–insulator–metal (MIM) diodes are among the most promising candidates for
applications in the high frequency regime. Owing to the tunneling dominant current …
applications in the high frequency regime. Owing to the tunneling dominant current …
Oxides for Rectenna technology
The quest to harvest untapped renewable infrared energy sources has led to significant
research effort in design, fabrication and optimization of a self-biased rectenna that can …
research effort in design, fabrication and optimization of a self-biased rectenna that can …
Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 AW−1 Based on Nitrogen‐Doped TiOx and AlOx Insulator Layers
Metal‐insulator‐insulator‐metal diodes based on nitrogen‐doped titanium dioxide (NTiOx)
and aluminum oxide (NAlOx) are fabricated and characterized for the first time. Pt/TiOx …
and aluminum oxide (NAlOx) are fabricated and characterized for the first time. Pt/TiOx …
Structural, optical properties of V2O5 and NiO thin films and fabrication of V2O5/NiO heterojunction
CHR Kishor, M Ruksana, T Amisha… - Physica Scripta, 2023 - iopscience.iop.org
The exceptional stability of metal oxide heterojunctions makes them worthy of the future.
Here we report V 2 O 5/NiO heterojunction device fabricated utilizing both physical and …
Here we report V 2 O 5/NiO heterojunction device fabricated utilizing both physical and …
Highly sensitive Al/Al2O3/Ag MIM diode for energy harvesting applications
The requirement of energy has always been one of the major concerns in developing as
well as developed countries. In quest of present energy demands, advancement in rectenna …
well as developed countries. In quest of present energy demands, advancement in rectenna …
Potential challenges and issues in implementation of MIM diodes for rectenna application
Metal-Insulator-Metal (MIM) diodes are one of the widely explored diodes for high frequency
applications. The tunneling based transport mechanism in such diodes provides an ultra-fast …
applications. The tunneling based transport mechanism in such diodes provides an ultra-fast …
A natural dye-based Schottky diode with observed quantum tunnelling and determined trap density, mobility, and excellent sensitivity and nonlinearity
AK Das, NB Manik, DK Mandal, S Rkashit… - Bulletin of Materials …, 2024 - Springer
Trap density (N t), density of carriers (no) and mobility are extracted in Al/beetroot/Cu
Schottky diode using the Poisson's equation. The trap density and carrier concentration …
Schottky diode using the Poisson's equation. The trap density and carrier concentration …
Parallel metal–insulator–metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer
T Akahane, S Ishii, K Yanagisawa… - Japanese Journal of …, 2023 - iopscience.iop.org
In this study, we investigated a parallel metal–insulator–metal (MIM) diode with an ultrathin
spin-coated hydron silsesquioxane (HSQ) layer. Ti and Au were adopted as the metal …
spin-coated hydron silsesquioxane (HSQ) layer. Ti and Au were adopted as the metal …
High sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode
This work reports on the fabrication of an improved sensitivity metal–insulator–metal (MIM)
diode. They devise an asymmetric structure diode that cascades vanadium, vanadium …
diode. They devise an asymmetric structure diode that cascades vanadium, vanadium …
Fabrication and characterization of Al/PMMA/Cr metal-insulator-metal diode
Metal-Insulator-Metal (MIM) diodes are a promising candidate for rectenna based energy
harvesting application owing to its tunneling based ultra-fast conduction mechanism. A …
harvesting application owing to its tunneling based ultra-fast conduction mechanism. A …