Two-dimensional materials prospects for non-volatile spintronic memories

H Yang, SO Valenzuela, M Chshiev, S Couet, B Dieny… - Nature, 2022 - nature.com
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Ferroic phases in two-dimensional materials

P Man, L Huang, J Zhao, TH Ly - Chemical Reviews, 2023 - ACS Publications
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic
materials, are attracting rising interest due to their fascinating physical properties and …

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

L Zhang, J Zhou, H Li, L Shen, YP Feng - Applied Physics Reviews, 2021 - pubs.aip.org
As Moore's law is gradually losing its effectiveness, the development of alternative high-
speed and low-energy–consuming information technology with postsilicon-advanced …

Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

A Pal, S Zhang, T Chavan, K Agashiwala… - Advanced …, 2023 - Wiley Online Library
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …

Giant tunnelling electroresistance through 2D sliding ferroelectric materials

J Yang, J Zhou, J Lu, Z Luo, J Yang, L Shen - Materials Horizons, 2022 - pubs.rsc.org
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN)
and its novel sliding inversion mechanism were reported experimentally (Science2021, 372 …

Giant tunneling magnetoresistance and electroresistance in -based van der Waals multiferroic tunnel junctions

Z Yan, Z Li, Y Han, Z Qiao, X Xu - Physical Review B, 2022 - APS
In the multiferroic tunnel junction (MFTJ) composed of ferromagnetic and ferroelectric
materials, the tunneling electroresistance (TER) coexists with the tunneling …

Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications

Z Wang, B Xu, S Pei, J Zhu, T Wen, C Jiao, J Li… - Science China …, 2022 - Springer
Two-dimensional van der Waals heterostructures (2D vdW HSs) can be constructed by
stacking different 2D materials together in nearly endless ways, and have significantly …

Layer-Dependent Giant Magnetoresistance in Two-Dimensional Magnetic Tunnel Junctions

J Yang, S Fang, Y Peng, S Liu, B Wu, R Quhe… - Physical Review …, 2021 - APS
Antiferromagnetism within the two-dimensional (2D) family offers a platform for spintronics.
The emergent 2D semiconductor Cr PS 4 is proved to be composed of ferromagnetic layers …

Two-dimensional intrinsic ferromagnets with high Curie temperatures: synthesis, physical properties and device applications

Y Guo, S Zhou, J Zhao - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Two-dimensional (2D) ferromagnets with rich electronic and optical properties are crucial for
scientific research and technological development, which lead to new applications in …