Intense Terahertz Excitation of Semiconductors presents the first comprehensive treatment
of high-power terahertz applications to semiconductors and low-dimensional semiconductor …

ABSTRACT Free‐Electron Lasers (FELs) collectively operate from the terahertz through the
ultraviolet range and via intracavity Compton backscattering into the X‐ray and gamma‐ray …

In a GaAs crystal, owing to the anomalous dispersion introduced by optical phonon
absorption, a phase-matched interaction is possible between a near-infrared beam and a …

The intersubband transitions in square and parabolic quantum wells under simultaneous
action of the hydrostatic pressure and high-frequency laser field have been investigated. We …

For future ultrafast all-optical networks, new optical devices are required that can directly
manipulate communication channels and shift their wavelength over the bandwidth of an …

Time and wavelength resolved spectroscopy requires optical sources emitting very short
pulses and a fast detection mechanism capable of measuring the evolution of the output …

We demonstrate the generation of high order terahertz (THz) frequency sidebands (up to 3rd
order) on a near infrared (NIR) optical carrier within a THz quantum cascade laser (QCL) …

We present an experimental study on efficient second order sideband generation in
symmetric undoped GaAs/AlGaAs multiple quantum wells. A near-infrared laser tuned to …

The mixing of near-infrared and terahertz (THz) beams has been observed in n-doped GaAs
quantum wells (QWs) and is shown to be quite different from that in undoped QWs. The …

The nonlinear optical properties of semiconductor quantum wells driven by intense in-plane
terahertz electric fields are investigated theoretically by employing the extended …