A common-gate cascaded with cascoded self-bias common source approach for 3.1–10.6 GHz UWB low noise amplifier
With the boom in demand of wireless devices operating in ultra-wideband (UWB), the
requirement latest low power design of low noise amplifier (LNA) has been increased. This …
requirement latest low power design of low noise amplifier (LNA) has been increased. This …
Analysis of Power in SRAM Cell with Various Pull up, Pull down and Pass Gate Transistors
CA Teja, S Radha, HV du John… - 2022 IEEE 11th …, 2022 - ieeexplore.ieee.org
SRAM cell plays major role in many microelectronic and nano electronic devices. Low
power consumption or low leakage power, high speed operations to match the recent trends …
power consumption or low leakage power, high speed operations to match the recent trends …
Design of Concurrent Dual Band Low Noise Amplifier for WLAN Applications
This paper presents a dual band LNA CMOS designed for a Wireless Local Area Network
(WLAN) application using CMOS 0.13-µm Silterra technology. The proposed design …
(WLAN) application using CMOS 0.13-µm Silterra technology. The proposed design …
A Feed-Forward Gain Enhancement Technique in a Narrow-Band Low Noise Amplifier Using Active Inductor
B Prameela, AE Daniel - Advances in VLSI and Embedded Systems …, 2022 - Springer
This paper presents a novel active inductor-based low noise amplifier (LNA), which is
capable of achieving high gain and low noise figure (NF) in a small die area. The proposed …
capable of achieving high gain and low noise figure (NF) in a small die area. The proposed …
Cascode Low Noise Amplifier (LNA) with Negative Feedback for Long Term Evolution (LTE)
AB Ibrahim, NH Kahar, CGC Kob… - IOP Conference Series …, 2021 - iopscience.iop.org
Every now and then communication technology continuing to evolved to fulfil the market
especially in mobile traffics of wireless technology demanding for high-rise data rates …
especially in mobile traffics of wireless technology demanding for high-rise data rates …