In recent years, dimensions and sizes of components and parts in the computer and
electronic industries have been steadily reducing, as they are now considered very tiny tools …

In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed
and investigated. The presented structure uses two isolated gates with the same work …

In this paper the new methods in improving the performance of carbon nanotube filed effect
transistors (CNTFETs) are reviewed and analyzed for the first time. Nano-meter dimensions …

In this study, a modified structure was proposed for the band-to-band tunneling field-effect
transistor (BTBT–FET) mainly to suppress the ambipolar current with the assumption that the …

By inserting a lightly doped region between the highly doped drain and the intrinsic channel
of a graphene nanoribbon tunnel field effect transistor (GNR-TFET), we propose a new …

In this paper a double gate graphene nanoribbon field effect transistor with electrically-
activated source extension is proposed. Source region of the proposed structure includes …

Since the introduction of integrated circuits (ICs) in 1952 and the acknowledgment of the first
IC at Texas Instrument in 1958, the last five decades witnessed an exponential development …

The present paper introduces a metal-oxide-semiconductor graphene nanoribbon field-
effect transistor (MOS-GNRFET), in which heterogeneous gates with different work functions …

In this paper, a tunneling graphene nanoribbon field effect transistor with electrically
activated drain extension, namely, EA-T-GNRFET, is proposed. The proposed structure …

A novel carbon nanotube field-effect transistor with stepwise doping profile channel (SDC-
CNTFET) is introduced for short-channel effects (SCEs) improvement. In SDC-CNTFET, the …