High-NA extreme ultraviolet (EUV) lithography is currently in development. Fabrication of
exposure tools and optics with a numerical aperture (NA) equal to 0.55 has started at ASML …

This new edition of the bestselling Microlithography: Science and Technology provides a
balanced treatment of theoretical and operational considerations, from elementary concepts …

Although Extreme ultraviolet lithography (EUVL) is now well into the commercialization
phase, critical challenges remain in the development of EUV resist materials. The major …

We present experimental evidence for an empirical correlator (or model) for stochastic local
CD uniformity (LCDU) of contact holes printed in resist with 0.33-NA EUV lithography. The …

We analyze the far field and near field diffraction pattern produced by an amplitude grating
whose strips present rough edges. Due to the stochastic nature of the edges a statistical …

Background: Contact hole variability is an important problem in the application of extreme
ultraviolet lithography for memory applications. One method to reduce it is source …

The control of line-edge roughness (LER) of features printed in photoresist poses significant
challenges to next-generation lithography techniques such as extreme-ultraviolet (EUV) …

As critical dimensions shrink, line-edge roughness (LER) and linewidth roughness become
of increasing concern. Traditionally, LER is viewed as a resist-limited effect; however, as …

Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet
(EUV) resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical …

The influence of line-edge roughness (LER) of an optical photomask on the resulting printed
wafer LER is investigated. The LER Transfer function (LTF) proposed by Naulleau and …