Recent developments in Chalcogenide phase change material-based nanophotonics
There is now a deep interest in actively reconfigurable nanophotonics as they will enable
the next generation of optical devices. Of the various alternatives being explored for …
the next generation of optical devices. Of the various alternatives being explored for …
A review on GeTe thin film-based phase-change materials
Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family,
which undergoes reversible transition between amorphous and crystalline phase when …
which undergoes reversible transition between amorphous and crystalline phase when …
Transition‐Metal Dichalcogenide NiTe2: An Ambient‐Stable Material for Catalysis and Nanoelectronics
S Nappini, DW Boukhvalov, G D'Olimpio… - Advanced Functional …, 2020 - Wiley Online Library
By means of theory and experiments, the application capability of nickel ditelluride (NiTe2)
transition‐metal dichalcogenide in catalysis and nanoelectronics is assessed. The Te …
transition‐metal dichalcogenide in catalysis and nanoelectronics is assessed. The Te …
Linear and non-linear optical dispersion parameters of Te81Ge15Bi4 chalcogenide glass thin films for optoelectronic applications
EG El-Metwally, NA Hegab, M Mostfa - Physica B: Condensed Matter, 2022 - Elsevier
Abstract Chalcogenide composition of Te 81 Ge 15 Bi 4 was prepared by the melt
quenching technique in bulk form and by the thermal evaporation method in thin film form …
quenching technique in bulk form and by the thermal evaporation method in thin film form …
The ac conduction mechanism and dielectric relaxation behavior of amorphous Te81Ge15Bi4 chalcogenide glass thin films
EG El-Metwally, NA Hegab, M Mostfa - Journal of Materials Science …, 2022 - Springer
Various chalcogenide amorphous films of Te81Ge15Bi4 in the range (143–721 nm) were
synthesized using the thermal evaporation technique. The ac electrical conductivity σ ac ω …
synthesized using the thermal evaporation technique. The ac electrical conductivity σ ac ω …
Kitkaite NiTeSe, an Ambient‐Stable Layered Dirac Semimetal with Low‐Energy Type‐II Fermions with Application Capabilities in Spintronics and Optoelectronics
I Vobornik, AB Sarkar, L Zhang… - Advanced Functional …, 2021 - Wiley Online Library
The emergence of Dirac semimetals has stimulated growing attention, owing to the
considerable technological potential arising from their peculiar exotic quantum transport …
considerable technological potential arising from their peculiar exotic quantum transport …
Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
The lack of order in amorphous chalcogenides offers them novel properties but also adds
increased challenges in the discovery and design of advanced functional materials. The …
increased challenges in the discovery and design of advanced functional materials. The …
Understanding the effect of sputtering pressures on the thermoelectric properties of GeTe films
In this work, we study the effect of sputtering pressures on the thermoelectric properties of
GeTe films. The working pressures were differentiated from 3 to 30 mTorr, and the as …
GeTe films. The working pressures were differentiated from 3 to 30 mTorr, and the as …
Ge1− xSx chalcogenide alloys for OTS applications using magnetron sputtering
Abstract 3D cross (X)–point memory arrays have attracted attention for future memory
architecture due to their cost efficiency and high density. Chalcogenide–based materials are …
architecture due to their cost efficiency and high density. Chalcogenide–based materials are …
Structure and optical properties of GeTe film controlled by amorphous to crystalline phase transition
W Lan, L Cao, Y Fu, J Fang, J Wang - Vacuum, 2022 - Elsevier
GeTe films have been showed great applications in the field of optical devices, especially in
infrared absorption due to their narrow band gap. In this paper, amorphous GeTe (a-GeTe) …
infrared absorption due to their narrow band gap. In this paper, amorphous GeTe (a-GeTe) …