A GaN-HEMT active drain-pumped mixer for S-band FMCW radar front-end applications
This paper reports for the first time a drain-pumped (DP) mixer using Gallium Nitride (GaN)
HEMT technology. Specifically, it describes a method aimed to predict the optimum bias …
HEMT technology. Specifically, it describes a method aimed to predict the optimum bias …
An Active Reconfigurable Mixer in GaN Technology for 5G Power Amplifier Wi-Fi Communications
R Kumar, TAG Babu, BK Kanaujia… - … on Engineering and …, 2024 - ieeexplore.ieee.org
The mixer's key attributes in this article are its high power output, high conversion gain, high
efficiency, and good isolation between board positions. We have designed and …
efficiency, and good isolation between board positions. We have designed and …