Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal - AEU-International Journal of Electronics and …, 2020 - Elsevier
The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
The dawn of Ga2O3 HEMTs for high power electronics-A review
Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …
semiconductor material for intended applications in RF, power electronics, and sensors with …
Device-level thermal management of gallium oxide field-effect transistors
B Chatterjee, K Zeng, CD Nordquist… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …
3 give promise to the development of next-generation power electronic devices with …
[HTML][HTML] Electro-thermal co-design of β-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors
Ultra-wide bandgap β-gallium oxide (Ga 2 O 3) devices are of considerable interest with
potential applications in both power electronics and radio frequency devices. However …
potential applications in both power electronics and radio frequency devices. However …
Review on heat and fluid flow in micro pin fin heat sinks under single-phase and two-phase flow conditions
A Mohammadi, A Koşar - Nanoscale and Microscale …, 2018 - Taylor & Francis
This article reviews recent studies on the hydrodynamic and thermal characteristics of micro
pin fin heat sink (MPFHS). In the studies reviewed in this article, liquid coolants such as …
pin fin heat sink (MPFHS). In the studies reviewed in this article, liquid coolants such as …
Diamond-incorporated flip-chip integration for thermal management of GaN and ultra-wide bandgap RF power amplifiers
D Shoemaker, M Malakoutian… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
GaN radio frequency (RF) power amplifiers offer many benefits including high power
density, reduced device footprint, high operating voltage, and excellent gain and power …
density, reduced device footprint, high operating voltage, and excellent gain and power …
[HTML][HTML] Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
Improvements in radio frequency and power electronics can potentially be realized with
ultrawide bandgap materials such as aluminum gallium nitride (Al x Ga 1− x N) …
ultrawide bandgap materials such as aluminum gallium nitride (Al x Ga 1− x N) …
The class D audio power amplifier: A review
Class D power amplifiers, one of the most critical devices for application in sound systems,
face severe challenges due to the increasing requirement of smartphones, digital television …
face severe challenges due to the increasing requirement of smartphones, digital television …
Thermal property evaluation of a 2.5 D integration method with device level microchannel direct cooling for a high-power GaN HEMT device
T Lian, Y Xia, Z Wang, X Yang, Z Fu, X Kong… - Microsystems & …, 2022 - nature.com
Gallium nitride high electron mobility transistor (GaN HEMT) devices have become critical
components in the manufacturing of high-performance radio frequency (RF) or power …
components in the manufacturing of high-performance radio frequency (RF) or power …