Directed self-assembly (DSA) of lamellar phase block-co-polymers (BCPs) can be used to
form nanoscale line-space patterns. However, exploiting the potential of this process for …

Block copolymer directed self-assembly is an attractive method to fabricate highly uniform
nanoscale features for various technological applications, but the dense periodicity of block …

Directed self-assembly (DSA) is a promising lithography candidate for technology nodes
beyond 14 nm. Researchers have shown contact hole patterning for random logic circuits …

Searching for natural materials exhibiting larger electron-electron interactions constitutes a
traditional approach to high-temperature superconductivity research. Very recently, we …

Advances in computational lithography over the last 10 years have been instrumental to the
continued scaling of semiconductor devices. Competitive scaling requires two types of …

Newest manufacturing technologies with feature sizes smaller than 20nm and FinFET
devices have favored more restrictive design rules for manufacturability while suffering from …

Epsilon near zero (ENZ) conditions have been observed to enhance superconducting
properties of a composite metamaterial based on random mixing of superconductor and …

We describe the first use of a novel photoresist-free X-ray nanopatterning technique to
fabricate an electronic device. We have produced a proof-of-concept device consisting of a …

Standard-cell design and characterization are presented for 7-nm CMOS platform
technology targeting low-power and high-performance applications with the tightest …

Advanced technology nodes employ a large number of innovations. In addition, they
requirescaling boosters' in the design of standard-cell libraries to be able to offer the scaling …