A method of manufacturing a semiconductor structure, the method includes removing a
portion of a dielectric filler from a first metal-containing layer formed over a semiconductor …

(57) ABSTRACT A method and apparatus for generating air gaps in a dielectric material of
an interconnect structure. One embodiment pro vides a method for forming a semiconductor …

A semiconductor structure includes a first metal-containing layer, a dielectric capping layer,
a second metal-containing layer, and a conductive pad. The first metal-containing layer …

(57) ABSTRACT A method for fabricating a semiconductor device, includes forming a
dielectric film above a substrate; forming a cap film, in which pores are formed, on the …

The disclosure provides mechanisms of performing metal chemical-mechanical polishing
(CMP) without significant loss of copper and a dielectric film of damascene structures. The …

Methods are provided for forming a structure that includes an air gap. In one embodiment, a
method is provided for forming a damascene structure comprises depositing a porous low …

A semiconductor structure comprises a first conductive material-containing layer. The first
conductive material-containing layer comprises a dielectric material, at least two conductive …

A method and apparatus for generating air gaps in a dielectric material of an interconnect
structure. One embodiment provides a method for forming a semiconductor structure …

In a Sophisticated metallization system, self-aligned air gaps may be provided in a locally
selective manner by using a radiation sensitive material for filling recesses or for forming …

An adaptive file delivery system and method transmits a data file, such as an audio-video
file, over a network or collection of networks in segments, each segment transmitted during a …