Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
Inductive source degeneration in 40-nm GaN HEMTs for operation above 100 GHz
Source degeneration and neutralization techniques are investigated at millimeter-wave (mm-
Wave) in gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The role of thru …
Wave) in gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The role of thru …
Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz
Y He, L Zhang, Z Cheng, C Li, J He… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this brief, a scaled In Al/GaN high-electron-mobility transistor (HEMT) was fabricated on
sapphire substrate with 47-nm-gate length, 300-nm source–drain distance, and selective …
sapphire substrate with 47-nm-gate length, 300-nm source–drain distance, and selective …
Schottky barrier gate N-polar GaN-on-Sapphire deep recess HEMT with record 10.5 dB linear gain and 50.2% PAE at 94 GHz
In this letter, we report on Schottky barrier (SB) gate N-Polar GaN-on-sapphire deep recess
high-electron-mobility transistors (HEMTs) with excellent dc, small signal and large signal …
high-electron-mobility transistors (HEMTs) with excellent dc, small signal and large signal …
High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical …
This article presents the utilization of the chemical–mechanical polishing (CMP) method to
fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high …
fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high …
Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process
B Sarkar, J Wang, H Watanabe… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this work, we report a low-cost methodology to increase the barrier height of N-polar GaN
Schottky diodes. Physical vapor deposition (PVD) of Mg followed by a thermal diffusion …
Schottky diodes. Physical vapor deposition (PVD) of Mg followed by a thermal diffusion …
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects
M Saro, F de Pieri, A Carlotto… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
A full characterization of deep level effects in N-polar GaN-based HEMTs has been carried
out by means of Drain Current Transient Spectroscopy (DCTS). The effect of ohmic contacts …
out by means of Drain Current Transient Spectroscopy (DCTS). The effect of ohmic contacts …
Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz
In this letter, we report the first D-band operation of N-Polar GaN technology with record
large signal performance using co-planar waveguide (CPW) pre-matching networks. The …
large signal performance using co-planar waveguide (CPW) pre-matching networks. The …
Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination
KM Chen, CJ Lin, CW Chuang, HC Pai, EY Chang… - Micromachines, 2023 - mdpi.com
GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-
power microwave applications, owing to their superior properties. However, the charge …
power microwave applications, owing to their superior properties. However, the charge …