In this report, we propose to enhance the hole injection efficiency by adjusting the barrier
height of the p-type electron blocking layer (p-EBL) for∼ 273 nm deep ultraviolet light …

For the limitation of experimental methods in crystal characterization, in this study, the
mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN …

A magnesium delta-doped AlGaN last barrier (MDDLB) was introduced in the structure of
deep ultraviolet light emitting diodes (DUV LEDs) to improve their light output power. The …

Gate reliability and its degradation mechanism were studied for the normally off high-
electron-mobility transistors (HEMTs) with regrown p-GaN gate and AlN/SiN x stack …

Vertical heterojunctions formed by layer-by-layer stacking of two-dimensional (2D) transition
metal dichalcogenides (TMDs) are believed to be the key element of next-generation …

A InGaN/GaN micro-square array light-emitting diode (LED) chip (micro-chip) has been
successfully fabricated by the focused ion beam (FIB) etching technique, which can reduce …

The photoresponse characteristics of separate absorption and multiplication (SAM) AlGaN
solar-blind avalanche photodiodes (APDs) were investigated in detail. The pinin avalanche …

We have investigated the unintentional n-type background doping in GaN (0001) layers
grown on semi-insulating 4H-SiC (0001) substrate by plasma-assisted molecular beam …

The recent technological trends toward miniaturization in lighting and display devices are
accelerating the requirement for high-performance and small-scale GaN-based light …

Abstract Effect of hydrogen (H 2) treatment during the GaN barrier growth on the
electroluminescence performance of green InGaN/GaN single-quantum-well light-emitting …