A significantly improved silicon nanowire (SiNW)-based broadband photodetector is
obtained in this work using the core–shell structure of SiNWs with hydrothermally processed …

Using physics-based predictive technology CAD simulations, we show the improvements
possible in device performance via strain engineering in vertically-stacked horizontal gate …

Stress/strain engineering techniques are employed to boost the performance of Gate-all-
around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm …

Strain engineering is a powerful tool for adjusting the electrical and optical properties of
materials, particularly in 2D materials on flexible polymer substrates. However, current strain …

Using non-equilibrium molecular dynamics simulations, we demonstrate that the thermal
conductivity of SiGe alloy nanowires is remarkably sensitive to inhomogeneous composition …

Self-heating of the device will intensify the thermo-mechanical effects, leading to an increase
in thermal stress. Currently, most of the research focuses on strain engineering of the device …

The comprehensive layout-dependence lattice and process-stress variations and induced
mobility gain in sub-7 nm germanium (Ge)-based Fin-type field-effect transistors (FinFETs) …

Based on a self-consistent Schrödinger-Poisson solver and top-of-the-barrier model, a
quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The …

Nanowires, due to their unique properties, are emerging as the building blocks of the next-
generation electronics industry and will play a critical role in both low-and high-performance …

In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was
investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures …