Spin-gapless semiconductors for future spintronics and electronics

X Wang, Z Cheng, G Zhang, H Yuan, H Chen, XL Wang - Physics Reports, 2020 - Elsevier
In recent years, spin-gapless semiconductors (SGSs) with parabolic and linear band
dispersions have aroused great interest worldwide in the field of materials science due to …

Emerging two-dimensional tellurides

S Siddique, CC Gowda, S Demiss, R Tromer, S Paul… - Materials today, 2021 - Elsevier
Abstract Two-dimensional (2D) materials are at the forefront of current materials research
due to their exciting and unique properties. 2D tellurides are emerging materials which are …

Recent advances in graphene-like 2D materials for spintronics applications

I Choudhuri, P Bhauriyal, B Pathak - Chemistry of Materials, 2019 - ACS Publications
For the progressive development of spintronics as the next generation information
technology source, it is essential to look for materials with high abundance, long spin …

[HTML][HTML] Synthesis and emerging properties of 2D layered III–VI metal chalcogenides

H Cai, Y Gu, YC Lin, Y Yu, DB Geohegan… - Applied Physics …, 2019 - pubs.aip.org
Atomically thin layered III–VI metal chalcogenides are an emerging class of 2D materials
that have attracted increasing attention in recent years due to their remarkable physical …

Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene

M Zhang, C Zhang, P Wang, S Li - Nanoscale, 2018 - pubs.rsc.org
A great obstacle for the practical applications of the quantum anomalous Hall (QAH) effect is
the lack of suitable two-dimensional (2D) materials with a sizable nontrivial band gap, high …

Tuning structural and electronic properties of two-dimensional aluminum monochalcogenides: Prediction of Janus monolayers

M Demirtas, MJ Varjovi, MM Çiçek, E Durgun - Physical Review Materials, 2020 - APS
The realization of ternary, single-layer transition metal dichalcogenides has suggested a
promising strategy to develop two-dimensional (2D) materials with alternative features. In …

Synthesis of large‐area InSe monolayers by chemical vapor deposition

HC Chang, CL Tu, KI Lin, J Pu, T Takenobu, CN Hsiao… - Small, 2018 - Wiley Online Library
Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from
the scientific community due to their high mobility transport and fascinating physical …

Anisotropic in‐plane ballistic transport in monolayer black arsenic‐phosphorus fets

W Zhou, S Zhang, Y Wang, S Guo, H Qu… - Advanced Electronic …, 2020 - Wiley Online Library
The performance limits of monolayer arsenic‐phosphorus (AsP) field‐effect transistors
(FETs) are explored by first‐principles simulations of ballistic transport in nanoscale devices …

Tuning magnetism at the two-dimensional limit: A theoretical perspective

D Li, S Li, C Zhong, J He - Nanoscale, 2021 - pubs.rsc.org
The discovery of two-dimensional (2D) magnetic materials provides an ideal testbed for
manipulating the magnetic properties at the atomically thin and 2D limit. This review gives …

Evidence of topological phase transition with excellent catalytic activity in the AgCaAs Heusler alloy: A first-principles investigation

BR Dhori, D Chodvadiya, PK Jha - The Journal of Physical …, 2023 - ACS Publications
Topological insulators are centered on the objective that a spin-locked surface state exhibits
exceptional spin transport properties with an insulating bulk. In the present work, we predict …