Device and circuit-level performance comparison of GAA nanosheet FET with varied geometrical parameters
NA Kumari, P Prithvi - Microelectronics Journal, 2022 - Elsevier
In this paper, DC and analog/RF figures of merit (FOMs) for different geometrical variations
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …
[HTML][HTML] β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
This paper presents a new β-Ga 2 O 3 Junctionless double gate Metal-Oxide-Field-
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Scattering mechanisms in β-Ga2O3 junctionless SOI MOSFET: investigation of electron mobility and short channel effects
In this work, we investigate the β-Ga 2 O 3 Junctionless SOI MOSFET (β-JLSM) by an
inserted P-layer in the buried oxide (BOX) region (IPB β-JLSM). We focused on the electron …
inserted P-layer in the buried oxide (BOX) region (IPB β-JLSM). We focused on the electron …
Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
In this study, we analyze a β-Ga2O3 gate-all-around nanowire junctionless transistor (β-GAA-
JLT) in accumulation mode. The performances are investigated by considering quantum …
JLT) in accumulation mode. The performances are investigated by considering quantum …
Investigation of tied double gate 4H–SiC junctionless FET in 7 nm channel length with a symmetrical dual p+ layer
In this work, we present a novel ultra-thin 4H–SiC junctionless tied double gate field effect
(DG-JLFET) transistors with a symmetrical dual p+ layer (SDP DG-JLFET) and the proposed …
(DG-JLFET) transistors with a symmetrical dual p+ layer (SDP DG-JLFET) and the proposed …
Investigation of junctionless fin-FET characterization in deep cryogenic temperature: DC and RF analysis
D Madadi - IEEE Access, 2022 - ieeexplore.ieee.org
This work presents the SOI Junctionless Fin-FET characterization in Deep Cryogenic
behavior (DC-JLFET). Results show that the JLT device is well-suited for various operations …
behavior (DC-JLFET). Results show that the JLT device is well-suited for various operations …
β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode
D Madadi - Silicon, 2022 - Springer
In this paper, we present a solution for understanding volume depletion and essentially
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements
In our work, we demonstrate a 4H-SiC gate-all-around cylindrical nanowire junctionless
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode
In this article, a new metal-semiconductor field-effect transistor (MESFET) is introduced by
amending the carrier distribution in the active regions of the device for radio frequency …
amending the carrier distribution in the active regions of the device for radio frequency …
A nanoscale junctionless FET to amend the electric field distribution using a β-Ga2O3 packet
This paper describes a junctionless double-gate FET at nanoscale dimensions that utilizes a
ß-Ga2O3 packet to improve and amend the electric field at the device's beginning and in the …
ß-Ga2O3 packet to improve and amend the electric field at the device's beginning and in the …