Resistive switching materials for information processing
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …
Emergent ferroelectricity in subnanometer binary oxide films on silicon
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
Enhanced ferroelectricity in ultrathin films grown directly on silicon
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
High‐performance neuromorphic computing based on ferroelectric synapses with excellent conductance linearity and symmetry
ST Yang, XY Li, TL Yu, J Wang, H Fang… - Advanced Functional …, 2022 - Wiley Online Library
Artificial synapses can boost neuromorphic computing to overcome the inherent limitations
of von Neumann architecture. As a promising memristor candidate, ferroelectric tunnel …
of von Neumann architecture. As a promising memristor candidate, ferroelectric tunnel …
Nanostructured perovskites for nonvolatile memory devices
Q Liu, S Gao, L Xu, W Yue, C Zhang, H Kan… - Chemical Society …, 2022 - pubs.rsc.org
Perovskite materials have driven tremendous advances in constructing electronic devices
owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties …
owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties …
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
The past, the present, and the future of ferroelectric memories
T Mikolajick, U Schroeder… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Ferroelectric materials are characterized by two stable polarization states that can be
switched from one to another by applying an electrical field. As one of the most promising …
switched from one to another by applying an electrical field. As one of the most promising …
Recent progress in two‐dimensional ferroelectric materials
Z Guan, H Hu, X Shen, P Xiang… - Advanced Electronic …, 2020 - Wiley Online Library
The investigation of two‐dimensional (2D) ferroelectrics has attracted significant interest in
recent years for applications in functional electronics. Without the limitation of a finite size …
recent years for applications in functional electronics. Without the limitation of a finite size …
High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
Ferroelectric tunnel junctions use a thin ferroelectric layer as a tunnelling barrier, the height
of which can be modified by switching its ferroelectric polarization. The junctions can offer …
of which can be modified by switching its ferroelectric polarization. The junctions can offer …