Artificial neuron devices

K He, C Wang, Y He, J Su, X Chen - Chemical Reviews, 2023 - ACS Publications
Efforts to design devices emulating complex cognitive abilities and response processes of
biological systems have long been a coveted goal. Recent advancements in flexible …

Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

Emergent ferroelectricity in subnanometer binary oxide films on silicon

SS Cheema, N Shanker, SL Hsu, Y Rho, CH Hsu… - Science, 2022 - science.org
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Enhanced ferroelectricity in ultrathin films grown directly on silicon

SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu… - Nature, 2020 - nature.com
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …

High‐performance neuromorphic computing based on ferroelectric synapses with excellent conductance linearity and symmetry

ST Yang, XY Li, TL Yu, J Wang, H Fang… - Advanced Functional …, 2022 - Wiley Online Library
Artificial synapses can boost neuromorphic computing to overcome the inherent limitations
of von Neumann architecture. As a promising memristor candidate, ferroelectric tunnel …

Nanostructured perovskites for nonvolatile memory devices

Q Liu, S Gao, L Xu, W Yue, C Zhang, H Kan… - Chemical Society …, 2022 - pubs.rsc.org
Perovskite materials have driven tremendous advances in constructing electronic devices
owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties …

Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics

JY Park, DH Choe, DH Lee, GT Yu, K Yang… - Advanced …, 2023 - Wiley Online Library
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

The past, the present, and the future of ferroelectric memories

T Mikolajick, U Schroeder… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Ferroelectric materials are characterized by two stable polarization states that can be
switched from one to another by applying an electrical field. As one of the most promising …

Recent progress in two‐dimensional ferroelectric materials

Z Guan, H Hu, X Shen, P Xiang… - Advanced Electronic …, 2020 - Wiley Online Library
The investigation of two‐dimensional (2D) ferroelectrics has attracted significant interest in
recent years for applications in functional electronics. Without the limitation of a finite size …

High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation

J Wu, HY Chen, N Yang, J Cao, X Yan, F Liu, Q Sun… - Nature …, 2020 - nature.com
Ferroelectric tunnel junctions use a thin ferroelectric layer as a tunnelling barrier, the height
of which can be modified by switching its ferroelectric polarization. The junctions can offer …