TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …

The concept of dual metal and double gate in Vertical TFET is presented to show the
improvement of DC as well as analog/RF device performance standards due to enhanced …

In this paper, we propose a novel germanium source based dual metal gate tunneling field
effect transistor (VGeDMG). Design of device effectively suppresses lateral tunneling current …

In this paper, we present a rigorous numerical simulation study on temperature sensitivity for
tunnel field effect transistor (TFET). The presented temperature sensitivity analysis is studied …

This work realises a hetero‐dielectric buried oxide vertical tunnel field effect transistor (HDB
VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the …

Continuous downscaling of CMOS technology at the nanometer scale with conventional
MOSFETs leads to short channel effects (SCE), increased subthreshold slope (SS), and …

This paper presents a novel design of Vertical Tunnel Field Effect Transistor (VTFET) using
work-function engineering. In this work, we investigate the impact of work-function …

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using
homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In …

This paper investigates a novel hetero dielectric buried oxide and gate dielectric based
PNPN tunnel field effect transistor (HDB-HDG-PNPN-TFET) using 2-D simulation. The …

A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed
and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the …